الوصف

The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. This mode of operation was first proposed by Yamagami in his Japanese patent S*******9, which was filed in ***8.[2] This mode of operation was first experimentally discovered by B. Jayant Baliga in vertical device structures with a V-groove gate region and reported in the literature in ***9.[3] The device structure was referred to as a ‘V-groove MOSFET device with the drain region replaced by a p-type Anode Region’ in this paper and subsequently as the insulated gate rectifier (IGR),[4] the insulated-gate transistor (IGT),[5] the conductivity-modulated field-effect transistor (COMFET)[6] and "bipolar-mode MOSFET".[7] BY wikipedia

(***0V IGBT Dual Module)
2MG*5B*2STD  (*5A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
(**0V IGBT Dual Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)