GaN-on-Silicon Epi Wafer Manufacturer AlGaN/GaN epitaxy

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GaN-on-Silicon Epi Wafer Manufacturer AlGaN/GaN epitaxy
HMT Supply **0mm,**0mm and **0mm diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (**1) substrate for power & RF applications.
HMT has successfully processed to produce HV and LV devices that were shipped and used by customers. HMT GaN-on-Si epitaxial process have been optimized to systematically obtain uniform and reproducible crack-free epi-wafers with low dislocations density and defects.