الوصف

MMBTA*4 Epitaxial Planar Die Construction Complementary NPN Type Available Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO **0 V Collector-Base Voltage VCBO **0 V Emitter-Base Voltage VEBO 7 V Collector Current Ic **0 mA Device Dissipation PD **5 mW Junction and Storage Temperature TJ, Tstg **5to***5 Degree ELECTRICAL CHARACTERISTICS TA=*5Degree unless otherwise noted Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) V(BR)CEO **0 — V Collector-Base Breakdown Voltage (IC=**0?A, IE=0) V(BR)CBO **0 __ V Emitter-Base Breakdown Voltage (IE= **0?A , IC=0) V(BR)EBO 7 — V Collector Cutoff Current (VCB=**0VIE=0) ICBO __ **0 nA DC Current Gain (Ic=*0mA, VCE=*0.0V) HFE *0 **0 — Collector-Emitter Saturation Voltage (Ic=**0mA, IB=*0mA) VCE(sat) — 0.5 V Current-Gain-Bandwidth Product (Ic=*0mA, VCE=*0V, f=*0MHz) fT *0 __ MHz DEVICE MARKING GMA*4(MMBTA*4)=3D