الوصف

Properties of the Silicon Ingots 6N: Purity: 6N, solar grade. Crystallinity: Mono-crystalline Donor type / Dopant: P / Boron Dislocation density: ≤ **0 cm*2 Orientation : <**0 > ± 3°, face and diagonal Oxygen concentration: ≤ 1 x ***8 atoms/cm3 Carbon concentration : ≤ 5 x ***6 atoms/cm3 Resistivity: 0.5 - 3.0 ohm-cm Lifetime: ≥ *0 µs Minimum Length of ingot: **0mm Diameter for **5mm square wafers: ≥ **3 +/- 2mm (round) or Diameter for **6mm square wafers: ≥ **3 +/- 2mm (round)