الوصف

Helios provides high quality SiC wafer (Silicon Carbide) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material, with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperature and high power device.

SiC Wafer Features :
• Low lattice mismatch
• High thermal conductivity 
• Low power consumption 
• Excellent transient characteristics
• High band gap

SiC Wafer Application :
• GaN epitaxy device 
• Optoelectronic device 
• High frequency device 
• High power device 
• High temperature device 
• Light emitting diodes


Regular specification of SiC Wafer        
Polytype: 6H-SiC/ 4H-SiC
Crystal Structure: Hexagonal
Orientation: on axis <***1>
Conductivity Type: N-type
Dopant: N2 (Nitrogen)
Diameter: 2 inch
Thickness: **0 um
Resistivity: 0.*3 ~ 0.*2 ohm-cm
Surface finish: Si face polished
TTV: max *0 um
Bandgap: 3.*2 eV / 3.1 eV
Micropipe Density: max **0 cm *2