silicon carbide substrate, ingot, wafer

الوصف

Our main products include conductive and semi-insulating silicon carbide substrates.
Conductive substrates can be used to grow silicon carbide epitaxial wafers to make high temperature and high voltage resistant silicon carbide diodes, silicon carbide MOSFETs and other power devices, which are used in new energy vehicles, photovoltaic power generation, rail transportation, smart grid, aerospace and other fields. The main sizes are *-inch and *-inch.
Semi-insulating substrates can be used to grow GaN epitaxial wafers to make high-temperature and high-frequency resistant HEMTs and other microwave and RF devices, which are mainly used in 5G communications, satellites, radar and other fields. The size is mainly 6 inches.