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Style No.: MDS**0 Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw termin...
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Style No.: MDS**0 Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw termin...
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Style No.: MDS**0 Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw termin...
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Style No.: MTC**0 Features: Isolation voltage: ***0V- Thyristor for line frequency Planar passivated chip Long-team stability and ...
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Style No.: MTC**0 Features: Isolation voltage: ***0V Thyristor for line frequency Planar passivated chip Long-team stability and ...
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Style No.: MTC**0 Features: Isolation voltage: ***0V Thyristor for line frequency Planar passivated chip Long-team stability and ...
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Style No.: MTC**0 Features: Isolation voltage: ***0V Thyristor for line frequency Planar passivated chip Long-team stability and ...
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Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw terminals, space and weigh...
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Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw terminals, space and weigh...
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Style No.: MDQ**0 Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw termin...
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Style No.: MDQ**0 Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw termin...
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Style No.: MDQ**0 Features: Isolation voltage: ***0V Planar passivated chips. Low forward voltage drop. Package with screw terminal...
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Style: KBPC***0 Features: Isolation voltage: ***0V Planar passivated chips. International standard package. Advanced heat dissipation prope...
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Style: KBPC***0 Features: Isolation voltage: ***0V Planar passivated chips. International standard package. Advanced heat dissipation prope...
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Crees CGHV****0F2 is a gallium nitride GaN High Electron Mobility Transistor HEMT on Silicon Carbide SiC substrates. This GaN Internally Matched IM FET offers excellent power added effici...
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Crees CGHV****0F2 is a gallium nitride GaN High Electron Mobility Transistor HEMT on Silicon Carbide SiC substrates. This GaN Internally Matched IM FET offers excellent power added e...
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M1 THRU M7 SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage - *0 to ***0 Volts Forward Current - 1.0 Ampere SMA FEATURES: 1. For surface mounted application. Low reverse leakage. Built-in strain rel...
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1.0 AMP. Surface Mount Rectifiers M1 M7 SMA/DO***4AC *0V ***0V **5 **0 C Case: Molded plastic Terminals: Pure tin plated, lead free solderable per J-STD***2B and JESD*2...
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Fast Recovery High Voltage Diodes *6KV with 0.5A **0C it is high voltage silicon stack Super small size High reliability High speed switching Rectification for high voltag.....
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We Hantronic Limited new product: NON-voltage diode Which is special for solar enery and Photovoltaic DC-to-AC converter, it s the newest product lauched here in Chinese market ...
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LL***8 Silicon Epitaxial Planar Switching Diode Fast switching diode in MiniMELF case especially suited for automatic surface mounting
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LL***8 Silicon Epitaxial Planar Switching Diode Fast switching diode in MiniMELF case especially suited for automatic surface mounting
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LL***8 Silicon Epitaxial Planar Switching Diode Fast switching diode in MiniMELF case especially suited for automatic surface mounting
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Phase control thyristor is a low loss switch semiconductor device.It has a wide voltage range, from ***0V****0V, Current range **0A****0A.As a high power electronic components, it play a very impor...
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Fast Switching Thyristor is a fast turn off semiconductor device, also called Inverter Thyristor, Fast Thyristor.Fast switching thyristor is a very importment thyristor co...
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