Description
Our factory can manufacture&supply sio2 coating silicon
wafer
Diameter 2“ 3” 4“ 5” 6“ 8” *2“
Growth Method CZ/FZ
Conductivity Type P/N
Dopant B, P, AS
Resistivity: 0.**1ohm-cm - 1ohm-cm, 1 - ***0 ohm-cm,***0 -
****0ohm-cm
Oxided layer Thickness: Customization
Primary flat Customization
Crystal orientation: <**0> <**0> <**1> or
customization
Surface: No scratch, no saw mark, no chip, no stain
Single side/double sides polished
Packing Aluminum foil vacuum packing
Particle <*0 & 0.3um/0.2um
roughness < 0.5nm
TTV < 4um
TIR < 4um
STIR < 4um
Bow < *0um
warp < *0um
Qty *5PCS/cassette
