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2inch 3inch 4inch 5inch Oxide silicon wafer

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الاتصال الآن

Jin He electron material company

China

عضو مجاني

الشخص الذي يمكن الاتصال به Mr. walliam

pudong, shanghai, shanghai

الاتصال الآن

Description

2inch 3inch 4inch 5inch 6inch Oxide silicon wafer
Growth Method    CZ
Conductivity Type   P/N
Dopant        P,B,AS
Resistivity:    0.**1 - 1ohm-cm , 1 - ***0 ohm-cm
Oxide layer thickness: customization
Crystal orientation: <**0> <**1>
surface: no scratch, no saw mark, no chip, no stain
single/double polished
packing Aluminum foil vacuum packing
particle <*0 & 0.3um
TTV < 4um
TIR < 4um
bow < *0um
warp < *0um
EPD < **0

2inch 3inch 4inch 5inch Oxide silicon wafer

Jin He electron material company

Description

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2inch 3inch 4inch 5inch Oxide silicon wafer

Jin He electron material company

Description

Send a direct inquiry to this supplier

إلى:

أريد أن أعرف:

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