AZO Transparent Conductive Coating Line

Description

AZO Transparent Conductive Coating Line

 
Brief introduction:
The horizontal/vertical continuous magnetron sputtering AZO film coating linedesigned to be composed of7 chambers,i.e. inputchamber, fore-bufferingtransitionchamber, fore-transmissionchamber,Sputtering depositionchamber, post-transmissionchamber, postbufferingtransitionchamber, outputchamberrespectively.Two pairs ofMFSitwintargets underPUC*4 closed loop controlto producehigh-quality SiO2 isolatedlayer. Equipped with*0 pairs of AZOrotarytargettorealize high-quality AZO transparent conductive film,themachine line designed for substrate glassdimension ***0mmin width,***0mmin length with production cycle optimized to******0 seconds. Furthermore, with turbo-pump group equipped for effective gas isolation in design, it obtainshighlyefficientisolationfrom contamination, stable pumpingvelocityanduniformdistributionofoperation gas. 

Technicaldata and features:
1),Equipmentstructure: horizontalorverticaltypecontinuous magnetron sputtering coating line. 
2), Substrate glass dimension: ***0mm×***0mm×3mm;
3),Design requiredofdepositionuniformity:in area of effective deposit, the uniformity of film thickness ±5%;
4),Cathode structure:by use of MF twinrotary cathodewith dimension**5mm×***0mm;
5),Driving mode;by use of double friction driving horizontal loader to carry substrate glass panel;
6), Depositiontechnology: adoptingZnOdopedAlceramic targetbyreactive sputtering depositiontechnology;
7), Electric control system: It can realize full communications by operator to machine and necessary intervention to production process with alarm system and error display functions that help operators to run the machine in good order and remove troubles. 
8), Temperature control: Stainless steel armoured heating deviceequipped is able to realize max. temperature **0 degrees centigrade, adjustable within the range from ordinary temperature to **0 degrees centigrade with stability±5degrees centigrade; 
9),Main technical parameters 
1), Maximumvacuumpressure: 6×*0E*4Pa 
2),Averageprocesscycle: *****0 seconds/frame. 
3), Substrate dimension: ***0×***0(mm) (can bedesigned as perrequirement). 
4), Depositionuniformity: ±5%.
China Guangdong PVD Metallizer Co.
 
Alex Li
Mobile: **6 **********8