GaAs Epi-ready Wafers

الوصف

Epi-Ready Polished GaAs Substrate Crystal Materials :Single Crystal Gallium Arsenide, VGF / LEC grown Crystal Orientation : (1 0 0) / (1 1 1) Dopant : Undoped / Zn or Si / Te Diameter: *0.8 ± 0.*5mm / *6.2± 0.*5mm / **0.0 ± 0.4mm Thickness: **5 ± *5um / **0 ± *5um / **5 ± *5um Orientation : （ **0 ） α 0 ±β 0 , off angle α and accuracy β upon request Resistivity: (***0)x*0 7 Ω.cm/ (***0)x*0 *3 Ω.cm Mobility: ≥ ***0 cm 2 / V·sec /N / A Carrier Concentration : N / A /(0.**3.0)×*0 *8 /cm3 Etch Pit Density :≤ 5·*0 3cm*2/7·**4cm*2/≤ 5·*0 2 cm *2 Orientation(OF) Flat, EJ / US (****1)±0.5deg, *6 ±1.0mm /*2±1.0mm/*2.5±1.0mm Identification(IF) Flat, EJ / US (**1 1) )±5.0 deg, 8 ±1.0mm / *1±1.0mm/ *8±1.0mm Front Side Surface :Polished in Epi-ready Prime grade, Backside Surface :Polished / Lapping or Etched Packaging N2 filled ， cassette / fluoroware, *5pcs /single piece