Germanium Epi-ready Wafer

الوصف

Epi-Ready Polished Ge Substrate Crystal Materials:Single Crystal Germanium, VGF / LEC grown Crystal Orientation :(1 0 0) / (1 1 1) Dopant :Ga Sb / As Diameter: *0.8 ± 0.*5mm / *6.2± 0.*5mm / **0.0 ± 0.4mm Thickness: **5 ± *5um / **5 ± *5um / **0 ± *5um Orientation: （ **0 ） α 0 ±β 0 , off angle α and accuracy β upon request Resistivity: 0.***0 Ω.cm/0.****0 Ω.cm Mobility: ≥ ***0 cm 2 / V·sec /N / A Carrier Concentration :N / A /(0.**3.0)×*0 *8 /cm 3 Etch Pit Density: ≤ 2·*0 3 cm *2 /≤ 5·*0 2 cm *2 Orientation(OF) Flat, EJ / US (****1)±0.5 deg, *6±1.0mm /*2±1.0mm/*2.5±1.0mm Identification(IF) Flat, EJ / US (**1 1) )±5.0 deg, 8±1.0mm / *1±1.0mm /*8±1.0mm Front Side Surface: Polished in Epi-ready Prime grade, Backside Surface: Polished / Lapping or etched Packaging:N2 filled ， cassette / fluoroware, *5pcs / single