sapphire wafer

الوصف

Crystal Materials: *9.**5% High Purity, **3 Grade Monocrystalline Al2O3 Wafer Surface Orientation: C-axis(***1) offset to M (****0) / A (****0) 0.2°±0.*5° / 0.3°±0.1° / ±0.*5° Diameter: *0.8mm ± 0.1mm / *6.2mm ± 0.*5mm / **0.0 ± 0.4mm / **5.0 ± 0.3mm / **0.0 ± 0.3mm Thickness : **0um ± *0um **0um ± *0um **0um ± *5um Major Flat : A-axis (1 **2 0) ± 0.2° Major Flat Length: *6.0mm ± 1.0mm / *2.0mm ± 1.0mm / *2.5 ± 1.0mm / *7.5 ± 2.5mm Minor: None Front Surface Finish: Epi polished, Ra< 0.*0nm Back Surface SSP: Fine ground, Ra 0.4 to 1.0um; DSP: Polished Edge condition Edge defects not to exceed SEMI M***1 TTV <*5um <*0um <*0um BOW <*5um <*0um <*0um Warp <*5um <*0um <*0um Bubble & Color None by visual inspection in intensive light Ground Boundary None by visual inspection in fluorescent light Cleanliness Free visible contamination Packaging Packaged in a class **0 clean room environment, in cassettes of *5pcs or single fluroware, under a nitrogen atmosphere. Note R-plane (**1 0 2), A-plane (1 **2 0 ), and M-plane(**1 0 0) are available; Customer's specification not listed above is also available upon request.